Insulated Gate Bipolar Transistors (IGBT) Market By Product Type (Standard IGBT, Reverse Blocking IGBT, Punch-Through IGBT, Non-Punch-Through IGBT), By Voltage Rating (Low Voltage IGBT, Medium Voltage IGBT, High Voltage IGBT), By Application (Power Electronics, Electric Vehicles, Renewable Energy, Industrial Machinery), By End-User Industry (Automotive, Power Generation, Industrial Equipment, Consumer Electronics), and By Region; Global Insights & Forecast (2023 – 2030)

As per Intent Market Research, the Insulated Gate Bipolar Transistors (IGBT) Market was valued at USD 7.2 Billion in 2024-e and will surpass USD 12.0 Billion by 2030; growing at a CAGR of 8.9% during 2025-2030.

The Insulated Gate Bipolar Transistor (IGBT) market is a significant part of the power semiconductor industry, known for its applications in power electronics, electric vehicles (EVs), industrial machinery, and renewable energy sectors. IGBTs offer efficient power switching capabilities, combining the advantages of both MOSFETs and bipolar junction transistors. As the need for energy-efficient power solutions escalates across industries, IGBTs are becoming indispensable. The market for IGBTs is segmented primarily by type, voltage rating, application, end-user industry, and region.

IGBT Type Segment is Largest Owing to Standard IGBT Dominance

Among various IGBT types, standard IGBTs dominate the market. These devices are widely used due to their superior switching characteristics, making them ideal for high-power applications such as electric motor drives, power supplies, and industrial machinery. Standard IGBTs have a higher threshold for voltage and current handling, contributing to their widespread use in applications requiring reliable and efficient power conversion. Their cost-effectiveness and robust performance have made them the preferred choice across multiple industries, including power generation and industrial applications.

Medium Voltage IGBT is Fastest Growing Owing to Industrial Demand

The voltage rating segment of the IGBT market is categorized into low voltage (less than 400V), medium voltage (400V to 2.5kV), and high voltage (greater than 2.5kV). Among these, medium voltage IGBTs are the fastest growing, driven by the increasing demand for efficient and reliable power conversion in industrial applications, automotive systems, and renewable energy. The medium voltage range provides a balance between cost and performance, making it ideal for industrial and automotive uses where voltage requirements are moderate but substantial efficiency and power handling are necessary.

Medium voltage IGBTs play a pivotal role in electric vehicle (EV) applications, renewable energy power generation, and industrial automation systems. With the growing adoption of electric vehicles and the expansion of industrial automation, the demand for medium voltage IGBTs is expected to rise. Additionally, the need for solar and wind energy systems, which require efficient power conversion technology, further accelerates the growth of medium voltage IGBT components.

Electric Vehicles (EV) Application Segment is Largest Owing to Rising EV Adoption

The application segment of the IGBT market covers diverse uses, including power electronics, electric vehicles, renewable energy, and industrial machinery. The electric vehicle (EV) application is the largest segment, driven by the global shift towards sustainable transportation and the electrification of the automotive industry. As governments and corporations push for environmentally friendly alternatives, the demand for EVs has surged, significantly boosting the need for IGBT technology. IGBTs in EVs play a crucial role in ensuring efficient power conversion, battery management, and electric motor control.

IGBTs are essential in EV powertrains, where they manage power flow between the battery, motor, and other components. As EV adoption accelerates, the demand for IGBT devices in electric vehicles continues to grow. Additionally, advancements in EV technology, such as faster charging times and improved battery performance, further push the demand for more efficient and reliable power semiconductor components, such as IGBTs.

Automotive Industry is Largest End-User of IGBTs Owing to Electric Vehicle Demand

The end-user industry segment for IGBTs includes automotive, power generation, industrial equipment, and consumer electronics. The automotive industry is the largest consumer of IGBTs, largely driven by the rapid rise of electric vehicles. IGBTs are crucial for managing and converting power in electric vehicles, controlling motor drives, and enhancing battery performance. The automotive industry's shift towards electric and hybrid vehicles has fueled the demand for IGBT components, which are vital in achieving higher energy efficiency and performance in these vehicles.

The growing emphasis on reducing carbon emissions and achieving sustainability goals has made electric vehicles a key focal point. As a result, automotive manufacturers are increasingly incorporating IGBTs into their powertrains and motor control systems. The demand for IGBTs in the automotive sector is expected to increase as more traditional internal combustion engine vehicles are replaced by electric and hybrid alternatives.

Asia-Pacific Region is Fastest Growing Owing to Manufacturing and EV Demand

The IGBT market is geographically segmented into North America, Europe, Asia-Pacific, Latin America, and the Middle East & Africa. The Asia-Pacific region is the fastest-growing market for IGBTs, driven by the rapid industrialization, adoption of electric vehicles, and the expansion of renewable energy projects across countries like China, Japan, and India. The region is home to some of the world’s largest manufacturing hubs, including automotive and electronics production, which heavily rely on power semiconductor technologies such as IGBTs.

Additionally, the demand for electric vehicles in China, the largest EV market globally, has created a surge in IGBT requirements. China’s aggressive efforts to promote clean energy and EV adoption have further contributed to the region’s rapid growth. As Asia-Pacific continues to lead in manufacturing and technological advancements, the demand for IGBT components across automotive, renewable energy, and industrial automation sectors is expected to grow at a robust pace.

Leading Companies and Competitive Landscape

The global IGBT market is highly competitive, with several key players dominating the industry. Infineon Technologies, Mitsubishi Electric, and Fuji Electric are some of the leading companies in the IGBT market, known for their advanced power semiconductor technologies. These companies have established strong positions due to their broad product portfolios, technological innovations, and strategic partnerships with industries such as automotive and renewable energy.

The competitive landscape is marked by intense research and development activities, with companies focusing on enhancing the performance, efficiency, and reliability of their IGBT products. Furthermore, with the increasing demand for electric vehicles and renewable energy systems, the market is witnessing significant investments from leading companies to cater to these growing industries. As the demand for energy-efficient power conversion systems continues to rise, the competition in the IGBT market is expected to intensify, with companies striving to offer more advanced and cost-effective solutions.

List of Leading Companies:

  • Mitsubishi Electric Corporation
  • Infineon Technologies AG
  • Hitachi Ltd.
  • Fuji Electric Co., Ltd.
  • ON Semiconductor Corporation
  • STMicroelectronics N.V.
  • Texas Instruments Inc.
  • Renesas Electronics Corporation
  • NXP Semiconductors
  • Toshiba Corporation
  • Broadcom Inc.
  • Semikron International GmbH
  • Vishay Intertechnology, Inc.
  • Sanken Electric Co., Ltd.
  • Microchip Technology Inc.

Recent Developments:

  • Mitsubishi Electric Corporation announced the launch of its new IGBT module series designed for renewable energy applications, aimed at improving energy efficiency and conversion.
  • Infineon Technologies AG introduced a new family of IGBT modules for automotive applications, focusing on improving performance for electric vehicles and hybrid electric vehicles.
  • Fuji Electric Co., Ltd. unveiled a high-voltage IGBT module optimized for industrial automation, which enhances the efficiency of motor drives and power supplies.
  • ON Semiconductor Corporation expanded its product portfolio with the release of IGBT-based power modules aimed at high-efficiency applications in renewable energy and power electronics.
  • STMicroelectronics N.V. completed the acquisition of a leading IGBT technology company, strengthening its position in the power semiconductor market to cater to growing demand in electric vehicle systems.

Report Scope:

Report Features

Description

Market Size (2024-e)

USD 7.2 Billion

Forecasted Value (2030)

USD 12.0 Billion

CAGR (2025 – 2030)

8.9%

Base Year for Estimation

2024-e

Historic Year

2023

Forecast Period

2025 – 2030

Report Coverage

Market Forecast, Market Dynamics, Competitive Landscape, Recent Developments

Segments Covered

Insulated Gate Bipolar Transistors (IGBT) Market By Product Type (Standard IGBT, Reverse Blocking IGBT, Punch-Through IGBT, Non-Punch-Through IGBT), By Voltage Rating (Low Voltage IGBT, Medium Voltage IGBT, High Voltage IGBT), By Application (Power Electronics, Electric Vehicles, Renewable Energy, Industrial Machinery), By End-User Industry (Automotive, Power Generation, Industrial Equipment, Consumer Electronics)

Regional Analysis

North America (US, Canada, Mexico), Europe (Germany, France, UK, Italy, Spain, and Rest of Europe), Asia-Pacific (China, Japan, South Korea, Australia, India, and Rest of Asia-Pacific), Latin America (Brazil, Argentina, and Rest of Latin America), Middle East & Africa (Saudi Arabia, UAE, Rest of Middle East & Africa)

Major Companies

Mitsubishi Electric Corporation, Infineon Technologies AG, Hitachi Ltd., Fuji Electric Co., Ltd., ON Semiconductor Corporation, STMicroelectronics N.V., Texas Instruments Inc., Renesas Electronics Corporation, NXP Semiconductors, Toshiba Corporation, Broadcom Inc., Semikron International GmbH, Vishay Intertechnology, Inc., Sanken Electric Co., Ltd., Microchip Technology Inc.

Customization Scope

Customization for segments, region/country-level will be provided. Moreover, additional customization can be done based on the requirements

1. Introduction

   1.1. Market Definition

   1.2. Scope of the Study

   1.3. Research Assumptions

   1.4. Study Limitations

2. Research Methodology

   2.1. Research Approach

      2.1.1. Top-Down Method

      2.1.2. Bottom-Up Method

      2.1.3. Factor Impact Analysis

  2.2. Insights & Data Collection Process

      2.2.1. Secondary Research

      2.2.2. Primary Research

   2.3. Data Mining Process

      2.3.1. Data Analysis

      2.3.2. Data Validation and Revalidation

      2.3.3. Data Triangulation

3. Executive Summary

   3.1. Major Markets & Segments

   3.2. Highest Growing Regions and Respective Countries

   3.3. Impact of Growth Drivers & Inhibitors

   3.4. Regulatory Overview by Country

4. Insulated Gate Bipolar Transistors (IGBT) Market, by Type (Market Size & Forecast: USD Million, 2023 – 2030)

   4.1. Standard IGBT

   4.2. Reverse Blocking IGBT

   4.3. Punch-Through IGBT

   4.4. Non-Punch-Through IGBT

5. Insulated Gate Bipolar Transistors (IGBT) Market, by Voltage Rating (Market Size & Forecast: USD Million, 2023 – 2030)

   5.1. Low Voltage IGBT (< 400V)

   5.2. Medium Voltage IGBT (400V - 2.5kV)

   5.3. High Voltage IGBT (> 2.5kV)

6. Insulated Gate Bipolar Transistors (IGBT) Market, by  Application (Market Size & Forecast: USD Million, 2023 – 2030)

   6.1. Power Electronics

   6.2. Electric Vehicles (EV)

   6.3. Renewable Energy (Solar & Wind)

   6.4. Industrial Machinery

   6.5. Others

7. Insulated Gate Bipolar Transistors (IGBT) Market, by  End-User Industry (Market Size & Forecast: USD Million, 2023 – 2030)

   7.1. Automotive

   7.2. Power Generation

   7.3. Industrial Equipment

   7.4. Consumer Electronics

   7.5. Others

8. Regional Analysis (Market Size & Forecast: USD Million, 2023 – 2030)

   8.1. Regional Overview

   8.2. North America

      8.2.1. Regional Trends & Growth Drivers

      8.2.2. Barriers & Challenges

      8.2.3. Opportunities

      8.2.4. Factor Impact Analysis

      8.2.5. Technology Trends

      8.2.6. North America Insulated Gate Bipolar Transistors (IGBT) Market, by Type

      8.2.7. North America Insulated Gate Bipolar Transistors (IGBT) Market, by Voltage Rating

      8.2.8. North America Insulated Gate Bipolar Transistors (IGBT) Market, by  Application

      8.2.9. North America Insulated Gate Bipolar Transistors (IGBT) Market, by  End-User Industry

      8.2.10. By Country

         8.2.10.1. US

               8.2.10.1.1. US Insulated Gate Bipolar Transistors (IGBT) Market, by Type

               8.2.10.1.2. US Insulated Gate Bipolar Transistors (IGBT) Market, by Voltage Rating

               8.2.10.1.3. US Insulated Gate Bipolar Transistors (IGBT) Market, by  Application

               8.2.10.1.4. US Insulated Gate Bipolar Transistors (IGBT) Market, by  End-User Industry

         8.2.10.2. Canada

         8.2.10.3. Mexico

    *Similar segmentation will be provided for each region and country

   8.3. Europe

   8.4. Asia-Pacific

   8.5. Latin America

   8.6. Middle East & Africa

9. Competitive Landscape

   9.1. Overview of the Key Players

   9.2. Competitive Ecosystem

      9.2.1. Level of Fragmentation

      9.2.2. Market Consolidation

      9.2.3. Product Innovation

   9.3. Company Share Analysis

   9.4. Company Benchmarking Matrix

      9.4.1. Strategic Overview

      9.4.2. Product Innovations

   9.5. Start-up Ecosystem

   9.6. Strategic Competitive Insights/ Customer Imperatives

   9.7. ESG Matrix/ Sustainability Matrix

   9.8. Manufacturing Network

      9.8.1. Locations

      9.8.2. Supply Chain and Logistics

      9.8.3. Product Flexibility/Customization

      9.8.4. Digital Transformation and Connectivity

      9.8.5. Environmental and Regulatory Compliance

   9.9. Technology Readiness Level Matrix

   9.10. Technology Maturity Curve

   9.11. Buying Criteria

10. Company Profiles

   10.1. Mitsubishi Electric Corporation

      10.1.1. Company Overview

      10.1.2. Company Financials

      10.1.3. Product/Service Portfolio

      10.1.4. Recent Developments

      10.1.5. IMR Analysis

    *Similar information will be provided for other companies 

   10.2. Infineon Technologies AG

   10.3. Hitachi Ltd.

   10.4. Fuji Electric Co., Ltd.

   10.5. ON Semiconductor Corporation

   10.6. STMicroelectronics N.V.

   10.7. Texas Instruments Inc.

   10.8. Renesas Electronics Corporation

   10.9. NXP Semiconductors

   10.10. Toshiba Corporation

   10.11. Broadcom Inc.

   10.12. Semikron International GmbH

   10.13. Vishay Intertechnology, Inc.

   10.14. Sanken Electric Co., Ltd.

   10.15. Microchip Technology Inc.

11. Appendix

A comprehensive market research approach was employed to gather and analyze data on the Insulated Gate Bipolar Transistors (IGBT) Market. In the process, the analysis was also done to analyze the parent market and relevant adjacencies to measure the impact of them on the Insulated Gate Bipolar Transistors (IGBT) Market. The research methodology encompassed both secondary and primary research techniques, ensuring the accuracy and credibility of the findings.

Research Approach -

Secondary Research

Secondary research involved a thorough review of pertinent industry reports, journals, articles, and publications. Additionally, annual reports, press releases, and investor presentations of industry players were scrutinized to gain insights into their market positioning and strategies.

Primary Research

Primary research involved conducting in-depth interviews with industry experts, stakeholders, and market participants across the E-Waste Management ecosystem. The primary research objectives included:

  • Validating findings and assumptions derived from secondary research
  • Gathering qualitative and quantitative data on market trends, drivers, and challenges
  • Understanding the demand-side dynamics, encompassing end-users, component manufacturers, facility providers, and service providers
  • Assessing the supply-side landscape, including technological advancements and recent developments

Market Size Assessment

A combination of top-down and bottom-up approaches was utilized to analyze the overall size of the Insulated Gate Bipolar Transistors (IGBT) Market. These methods were also employed to assess the size of various subsegments within the market. The market size assessment methodology encompassed the following steps:

  1. Identification of key industry players and relevant revenues through extensive secondary research
  2. Determination of the industry's supply chain and market size, in terms of value, through primary and secondary research processes
  3. Calculation of percentage shares, splits, and breakdowns using secondary sources and verification through primary sources

Bottom Up and Top Down -

Data Triangulation

To ensure the accuracy and reliability of the market size, data triangulation was implemented. This involved cross-referencing data from various sources, including demand and supply side factors, market trends, and expert opinions. Additionally, top-down and bottom-up approaches were employed to validate the market size assessment.

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